Part Number Hot Search : 
N60UFD 757120 MS3412 D90N4 MC33099 FDW9926A 74HC73 4073B
Product Description
Full Text Search
 

To Download FDMC267412 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  tm november 2012 fdmc2674 n-channel ultrafet trench mosfet ?2012 fairchild semiconductor corporation fdmc2674 rev.f3 www.fairchildsemi.com 1 fdmc2674 n-channel ultrafet trench mosfet 220v, 7.0a, 366m features ? max r ds(on) = 366m at v gs = 10v, i d = 1.0a ? typ q g = 12.7nc at v gs = 10v ? low miller charge ? low q rr body diode ? optimized efficiency at high frequencies ? uis capability ( single pulse and repetitive pulse) ? rohs compliant general description ultrafet device combines c haracteristics that enable benchmark efficiency in power conversion applications. optimized for r ds(on) , low esr, low total and miller gate charge, these devices are ideal for hi gh frequency dc to dc converters. application ? dc/dc converters and off-line ups ? distributed power archite c tures mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 220 v v gs gate to source voltage 20 v i d drain current -continuous (silicon limited) t c = 25c 7.0 a -continuous t a = 25c (note 1b) 1.0 -pulsed 13.8 e as single pulse avalanche energy (note 3) 11 mj p d power dissipation t c = 25c 42 w power dissipation t a = 25c (note 1a) 2.1 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (note 1) 3.0 c/w r ja thermal resistance, junction to ambient (note 1a) 60 device marking device package reel size tape width quantity fdmc2674 fdmc2674 mlp 3.3x3.3 13 ?? 12 mm 3000 units g s s s d d d d 5 6 7 8 3 2 1 4 1 2 3 4 5 dd d d g s s s bottom top mlp 3.3x3.3 6 7 8
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f3 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 220 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 248 mv/ c i dss zero gate voltage drain current v ds = 176v, v gs = 0v 1 p a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 2 3.4 4 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -10.2 mv/ c r ds(on) static drain to source on resistance v gs = 10v, i d = 1.0a 305 366 m : v gs = 10v, i d = 1.0a , t j = 150 c 678 814 dynamic characteristics c iss input capacitance v ds = 100v, v gs = 0v, f = 1mhz 880 1180 pf c oss output capacitance 70 95 pf c rss reverse transfer capacitance 11 20 pf switching characteristics t d(on) turn-on delay time v dd = 100v, i d = 1.0a v gs = 10v, r gen = 2.4 : 9 18 ns t r rise time 13 23 ns t d(off) turn-off delay time 15 27 ns t f fall time 21 34 ns q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 15v i d = 1.0a 12.7 18 nc q gs gate to source gate charge 3.8 nc q gd gate to drain ?miller? charge 2.9 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 2.2a (note 2) 0.8 1.5 v t rr reverse recovery time i f = 1.0a, di/dt = 100a/ p s 60 ns q rr reverse recovery charge 109 nc notes: 1: r t ja is determined with the device mounted on a 1 in 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ja is determined by the user's board design. (a)r t ja = 60c/w when mounted on a 1 in 2 pad of 2 oz copper, 1.5?x1.5?x0.062? thick pcb. (b)r t ja = 135c/w when mounted on a minimum pad of 2 oz copper. 2: pulse test: pulse width < 300 p s, duty cycle < 2.0%. 3: starting t j = 25 c; n-ch: l = 1mh, i as = 4.7a, v dd = 25v, v gs = 10v. a. 60c/w when mounted on a 1 in 2 pad of 2 oz copper b. 135c/w when mounted on a minimum pad of 2 oz copper
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f3 www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 pulse duration = 80 p s duty cycle = 0.5%max v gs = 4.5v v gs = 7v v gs = 5v v gs = 10v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0.5 1.0 1.5 2.0 2.5 3.0 0.8 1.0 1.2 1.4 1.6 pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 10v v gs = 7v v gs = 5.0v v gs = 4.5v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.4 0.8 1.2 1.6 2.0 2.4 i d = 1a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 4 8 12 16 20 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pulse duration = 80 p s duty cycle = 0.5%max t j = 150 o c t j = 25 o c i d = 1a r ds(on) , drain to source on-resistance ( : ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 23456 0 1 2 3 4 v dd = 5v pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.3 0.6 0.9 1.2 1e-4 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 20 s o u r c e t o d r a i n d i o d e forward voltage vs source current
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f3 www.fairchildsemi.com 4 figure 7. 03691215 0 2 4 6 8 10 v dd = 100v v gs , gate to source voltage(v) q g , gate charge(nc) i d = 1a gate charge characteristics figure 8. 0.1 1 10 100 10 100 1000 5 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 2000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 0.1 1 t j = 25 o c t j = 125 o c i as , avalanche current ( a ) 2 t av , time in avalanche(ms) u n c l a m p e d i n d u c t i v e switching capability figure 10. 0.1 1 10 100 1000 1e-3 0.01 0.1 1 10 10s dc 1s 100ms 10ms 1ms 100us single pulse t j = max rated r t ja = 135 o c/w t a = 25 o c r d s(on) limited i d , drain current (a) v ds , drain to source voltage (v) 30 f o r w a r d b i a s s a f e operating area figure 11. single pulse maximum power dissipation 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 single pulse r t ja = 135 o c/w 0.5 p ( pk ) , peak transient power (w) t, pulse width (s) 500 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - typical characteristics t j = 25c unless otherwise noted
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f3 www.fairchildsemi.com 5 figure 12. transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 single pulse r t ja = 135 o c/w d = 0.5 0.2 0.1 0.05 0.02 0.01 duty cycle-descending order t, rectangular pulse duration (s) normalized thermal impedance, z t ja 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
fdmc2674 n-channel ultrafet trench mosfet fdmc2674 rev.f3 www.fairchildsemi.com 6 dimensional outline and pad layout
fdmc2674 rev. f3 www.fairchildsemi.com 7 fdmc2674 n-channel uitrafet trench mosfet trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages cu stomers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ?


▲Up To Search▲   

 
Price & Availability of FDMC267412

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X